PART |
Description |
Maker |
SSW208 |
DC-4 GHz, High Isolation GaAs MMIC SPDT Switch DC - 4型频率,高隔离的GaAs MMIC SPDT开
|
Stanford Microdevices
|
HMC132 |
GaAs MMIC HIGH-ISOLATION
|
Hittite Microwave Corporation
|
MGFC36V7177A |
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
TC2998E |
2.5-2.7GHz 20W Packaged GaAs Power FETs
|
Transcom, Inc.
|
MGFX36V0717 |
10.7-11.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFX39V0717 |
10.7-11.7GHz Band 8W Internally MATCHD GaAs FET
|
Mitsubishi Electric Corporation
|
UPG2022T5G |
HIGH POWER GaAs MMIC SPDT SWITCH
|
CEL
|
HMMC-3022 |
DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-2 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路定标 DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-2 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路2定标
|
Agilent(Hewlett-Packard)
|
MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS45V2527A |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
316MS8E |
GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER, 1.5 - 3.8 GHz
|
美国讯泰微波有限公司上海代表
|